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FGB40T65SPD_f085 650v 40 a field stop trench igbt ?semiconductor components industries, llc, 2016 1 www.onsemi.com november 2016 - rev. 1.0 absolute maximum ratings notes: 1: v cc = 400 v, v ge = 15 v, i c = 120 a, r g = 20 ? , inductive load 2: repetitive rating: pulse width limited by max. junction temperature symbol description ratings units v ces collector to emitter voltage 650 v v ges gate to emitter voltage 20 v transient gate to emitter voltage 30 v i c collector current @ t c = 25 o c80 a collector current @ t c = 100 o c40 a i cm pulsed collector current (note 2) 120 a i f diode forward current @ t c = 25 o c40 a diode forward current @ t c = 100 o c20 a i fm pulsed diode maximum forward current (note 2) 120 a p d maximum power dissipation @ t c = 25 o c 267 w maximum power dissipation @ t c = 100 o c 134 w scwt short circuit withstand time @ t c = 25 o c5 s t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c FGB40T65SPD_f085 650v, 40a field stop trench igbt features ? aec-q101 qualified ? low saturation voltage : v ce(sat) = 2.0 v(typ.) @ i c = 40 a ? 100% of the parts are dynamically tested (note 1) ? short circuit ruggedness > 5 s @ 25 o c ? maximum junction temperature : t j = 175 o c ? fast switching ? tight parameter distribution ? positive temperature coefficient for easy parallel operation ? copacked with soft, fast recovery diode ? rohs compliant general description using the novel field stop 3r d generation igbt technology, fgh40t65spd_f085 offers the optimum performance with both low conduction loss and switching loss for a high efficiency operation in various applications , while provides 50v higher blocking voltage and rugged high current switching reliability. meanwhile, this part also offers and advantage of outstanding performance in parallel operation. applications ? onboard charger ? aircon compressor ? ptc heater ? motor drivers ? other automotive power-train and auxiliary applications g e c collector (flange) to-263ab/d 2 -pak g c e
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 2 www.onsemi.com november 2016 - rev. 1.0 package marking and ordering information electrical characteristi cs of the igbt t c = 25 c unless otherwise noted device marking device package reel size tape width qty per reel FGB40T65SPD FGB40T65SPD_f085 to-263ab/d2-pak - - 800ea symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 1ma 650 - - v bv ces t j temperature coefficient of breakdown voltage v ge = 0v, i c = 1ma -0.6-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 40ma, v ce = v ge 4.0 5.8 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v -2.02.4v i c = 40a , v ge = 15v, t c = 175 o c -2.9- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1520 - pf c oes output capacitance - 92 - pf c res reverse transfer capacitance - 15 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 25 o c -18- ns t r rise time - 26 - ns t d(off) turn-off delay time - 35 - ns t f fall time - 10 - ns e on turn-on switching loss - 0.97 - mj e off turn-off switching loss - 0.28 - mj e ts total switching loss - 1.25 - mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 175 o c -14- ns t r rise time - 35 - ns t d(off) turn-off delay time - 38 - ns t f fall time - 13 - ns e on turn-on switching loss - 1.61 - mj e off turn-off switching loss - 0.47 - mj e ts total switching loss - 2.08 - mj t sc short circuit withstand time v cc = 400v, v ge = 15v, r g = 10 5-- s
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 3 www.onsemi.com november 2016 - rev. 1.0 electrical characteristi cs of the igbt (continued) electrical characteristi cs of the diode t c = 25 c unless otherwise noted thermal characteristics symbol parameter test conditions min. typ. max units q g total gate charge v ce = 400v, i c = 40a, v ge = 15v -36-nc q ge gate to emitter charge - 12 - nc q gc gate to collector charge - 11 - nc symbol parameter test conditions min. typ. max units v fm diode forward voltage i f = 20a t c = 25 o c- 2.0 2.7 v t c = 175 o c- 1.8 - e rec reverse recovery energy i f = 20a, di f /dt = 200a/ s t c = 175 o c- 51 - j t rr diode reverse recovery time t c = 25 o c- 34 - ns t c = 175 o c - 206 - q rr diode reverse recovery charge t c = 25 o c- 56 - nc t c = 175 o c - 731 - symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 0.56 o c / w r jc (diode) thermal resistance, junction to case - 1.71 o c / w r ja thermal resistance, junction to ambient - 40 o c / w
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 4 www.onsemi.com november 2016 - rev. 1.0 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical output characteristics figure 4. transfer characteristic figure 5. typical saturation voltage figure 6. saturation voltage vs. v ge characteristics
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 5 www.onsemi.com november 2016 - rev. 1.0 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn off switching soa characteristics
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 6 www.onsemi.com november 2016 - rev. 1.0 typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. gate resistance gate resistance figure 15. turn-on characteristics vs. figure 16. turn-off characteristics vs. collector current collector current figure 17. switching loss vs gate resistance figure 18. switching loss vs collector current
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 7 www.onsemi.com november 2016 - rev. 1.0 typical performance characteristics figure 19. forward characteristics figure 20. reverse current figure 21. stored charge figure 22. reverse recovery time figure 23. saturation voltage vs. case temperature at variant current level
FGB40T65SPD_f085 650v 40a field stop trench igbt ?semiconductor components industries, llc, 2016 8 www.onsemi.com november 2016 - rev. 1.0 typical performance characteristics figure 24. transient thermal impedance of igbt figure 25. transient thermal impedance of diode notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t c p dm t 1 t 2 notes: duty factor: d = t 1 /t 2 peak t j = p dm x z ja x r ja + t c p dm t 1 t 2
land pattern recommendation '(7$,/$527$7('? scale: 2x 2 seating plane 3 4 gage plane 1 2 1 4 3 see detail a 10.67 9.65 1.68 1.00 9.65 8.38 1.78 max 1.78 1.14 0.99 0.51 5.08 (2.12) 6.22 min 6.86 min 15.88 14.61 1.65 1.14 4.83 4.06 0.74 0.33 ? ? ? ? 2.79 1.78 (5.38) 0.25 max 0.25 0.25 a b m m -a- -b- 0.10 b notes: unless otherwise specified a) all dimensions are in millimeters. b) reference jedec, to-263, variation ab. c) dimensioning and tolerancing per dimensioning and tolerancing per asme y14.5 - 2009. d) location of the pin hole may vary (lower left corner, lower center and center of the package). e) landpattern recommendation per ipc to254p1524x482-3n f) filename: to263a02rev8 10.67 9.45 3.80 1.05 10.00 unless noted, all dims typical 5.08 2 3 4 1 2 1 4 3 0.25 max plastic body stub front view - diode products version alternative supplier detail back view - diode products version alternative supplier detail
www. onsemi.com 1 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent ? marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 www.onsemi.com literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative ? semiconductor components industries, llc

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